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Göran Jarlskog

Göran Jarlskog

Professor emeritus

Göran Jarlskog

Modelling radiation damage to pixel sensors in the ATLAS detector

Author

  • M Aaboud
  • Torsten Åkesson
  • Simona Bocchetta
  • Lene Bryngemark
  • Eric Corrigan
  • Caterina Doglioni
  • Kristian Gregersen
  • Eva Brottmann Hansen
  • Vincent Hedberg
  • Göran Jarlskog
  • Charles Kalderon
  • Edgar Kellermann
  • Balazs Konya
  • Else Lytken
  • Katja Mankinen
  • Caterina Marcon
  • Ulf Mjörnmark
  • Geoffrey Mullier
  • Ruth Pöttgen
  • Trine Poulsen
  • Eleni Skorda
  • Oxana Smirnova
  • L. Zwalinski
Show all

Summary, in English

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 1015 1 MeV neq/cm2, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (≤ 10 1 MeV neq/cm2). © 2019 CERN for the benefit of the ATLAS collaboration. Published by IOP Publishing Ltd on behalf of Sissa Medialab. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence.

Department/s

  • Particle and nuclear physics
  • eSSENCE: The e-Science Collaboration

Publishing year

2019

Language

English

Publication/Series

Journal of Instrumentation

Volume

14

Issue

6

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Accelerator Physics and Instrumentation
  • Subatomic Physics

Keywords

  • Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc)
  • Radiation-hard detectors
  • Solid state detectors
  • Electric fields
  • Electron emission
  • Ionizing radiation
  • Radiation damage
  • Readout systems
  • Silicon detectors
  • ATLAS experiment
  • Charge collection efficiency
  • Interaction points
  • Modelling and simulations
  • Nonionizing radiation
  • Radiation hard detectors
  • Silicon pixel detector
  • Pixels

Status

Published

ISBN/ISSN/Other

  • ISSN: 1748-0221